5JL2CZ47
TOSHIBA HIGH EFFICIENCY DIODE STACE (HED)
SILICON EPITAXIAL TYPE
5JL2CZ47
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Repetitive Peak Reverse Voltage
: VRRM = 600 V
Average Output Rectified Current
: IO = 5 A
Ultra Fast Reverse-Recovery Time
Unit: mm
: trr = 50 ns (Max.)
Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
600
V
Average Output Rectified Current
IO
5
A
Peak One Cycle Surge Forward
Current (Sin Wave)
Junction Temperature
IFSM
25 (50Hz)
27.5 (60Hz)
A
Tj
−40~150
°C
―
Screw Torque
°C
Tstg
Storage Temperature Range
−40~150
0.6
N·m
JEDEC
―
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
12-10C1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 2.0 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
SYMBOL
TEST CONDITION
TYP.
MAX
UNIT
(Note 1)
VFM
IFM = 2.5A
―
2.0
V
Repetitive Peak Reverse Current
(Note 1)
IRRM
VRRM = 600V
―
50
μA
Reverse Recovery time
(Note 1)
trr
IF = 2A, di / dt = −20A / μs
―
50
ns
Forward Recovery time
(Note 1)
tfr
IF = 1A
―
150
ns
Total DC, Junction to Case
―
3.8
°C / W
Thermal Resistance
Rth (j−c)
Note 1: A value applied to one cell.
POLARITY
1
2006-11-08