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CRG04T5L,TEMQ
CRG04 TOSHIBA Rectifier Silicon Diffused Type CRG04 Unit: mm General-Purpose Rectifier Applications Average forward current: IF (AV) = 1.0 A • Average forward voltage: VFM = 1.1V(Max) • Suitable for high-density board assembly due to the use of a small surface-mount package, S−FLATTM 0.65 ± 0.2 • 2.6 ± 0.1 3.5 ± 0.2 Repetitive peak reverse voltage: VRRM = 600 V 0.65 ± 0.2 ② • Absolute Maximum Ratings (Ta = 25°C) Rating Unit Repetitive Peak Reverse Voltage VRRM 600 V Average Forward Current IF (AV) 1.0(Note1) A IFSM 15.0 (50Hz) A Tj −40 to 150 °C Tstg −40 to 150 ① °C Peak One Cycle Surge Forward Current (Non−Repetitive) Junction Temperature Storage Temperature Range 0.98 ± 0.1 Symbol 0.16 + 0.2 1.6 − 0.1 0 ~ 0.1 Characteristics 0.9 ± 0.1 ① ANODE ② CATHODE JEDEC ― JEITA Note 1: Ta=66°C Device mounted on a ceramic board board size: 50 mm × 50 mm soldering land: 2 mm ×2 mm board thickness: 0.64 mm Half-sine waveform: α =180° ― TOSHIBA 3-2A1A Weight: 0.013 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit VFM(1) Repetitive peak reverse current Thermal resistance ⎯ 0.84 ⎯ V VFM(2) IFM = 0.7 A (Pulse test) ⎯ 0.95 ⎯ V VFM(3) Peak forward voltage IFM = 0.1 A (Pulse test) IFM = 1.0 A (Pulse test) ⎯ 0.98 1.1 V VRRM = 600 V (Pulse test) ⎯ ⎯ 10 μA ⎯ ⎯ 65 IRRM Rth (j-a) Rth (j-ℓ) Device mounted on a ceramic board Board size: 50 mm × 50 mm Soldering land: 2 mm × 2 mm Board thickness: 0.64 mm Device mounted on a glass-epoxy board Board size: 50 mm × 50 mm Soldering land: 6 mm × 6 mm Board thickness: 1.6 mm ― °C/W ⎯ ⎯ 130 ⎯ ⎯ 20 °C/W Start of commercial production 2004-08 1 2013-11-01
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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