X28C512/X28C513
X28C512/X28C513
512K
64K x 8 Bit
5 Volt, Byte Alterable E2PROM
•
FEATURES
•
PIN CONFIGURATIONS
PLASTIC DIP
CERDIP
FLAT PACK
SOIC (R)
NC
1
32
VCC
The X28C512/513 supports a 128-byte page write operation, effectively providing a 39µs/byte write cycle and
enabling the entire memory to be written in less than 2.5
seconds. The X28C512/513 also features DATA Polling
and Toggle Bit Polling, system software support schemes
used to indicate the early completion of a write cycle. In
addition, the X28C512/513 supports the Software Data
Protection option.
TSOP
A11
A9
A8
A13
A14
NC
NC
NC
WE
VCC
NC
NC
NC
NC
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
PLCC / LCC
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
X28C512
2
31
WE
3
30
NC
A12
4
29
A14
A7
5
28
A13
A6
6
27
A8
A5
7
26
A9
A4
8
25
A11
PGA
A3
9
24
OE
A2
10
23
A10
I/O0
I/O2
I/O3
I/O5
I/O6
15
17
19
21
22
A1
11
22
CE
A0
I/O0
I/O1
12
21
13
20
I/O7
I/O6
14
19
I/O2
VSS
15
18
I/O5
I/04
16
17
I/O3
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A0
14
A2
12
A3
11
A4
10
A5
9
A6
8
A7
7
A12
6
A15
5
NC
2
NC
4
NC
3
A10
25
OE
26
A11
27
A9
28
A8
29
A13
30
VCC
NC
36
34
NC
32
A14
31
NC
1
NC
33
BOTTOM
VIEW
3856 FHD F01
WE
35
3856 FHD F02
© Xicor, Inc. 1991, 1995, 1996 Patents Pending
3856-3.1 2/24/99 T1/C0/D0 NS
1
A7
A12
A14
A15
VCC
WE
A13
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
CE
I/O1
VSS
I/O4
I/O7
16
18
20
23
24
A1
13
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
3856 FHD F03
3856 ILL F22
30
32 31 29
54 3 2
1
6
28
7
27
26
8
X28C513
25
9
(TOP VIEW)
24
10
11
23
12
22
13
15 16 17 18 19 20 21
14
I/O1
I/O2
VSS
X28C512
30
32 31 29
54 3 2
1
6
28
7
27
26
8
X28C512
25
9
(TOP VIEW)
24
10
11
23
12
22
13
15 16 17 18 19 20 21
14
I/O1
I/O2
VSS
NC
A15
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
NC
NC
VSS
NC
NC
I/O2
I/O1
I/O0
A0
A1
A2
A3
I/O5
I/O6
•
•
The X28C512/513 is an 64K x 8 E2PROM, fabricated
with Xicor’s proprietary, high performance, floating gate
CMOS technology. Like all Xicor programmable nonvolatile memories the X28C512/513 is a 5V only device.
The X28C512/513 features the JEDEC approved pinout
for bytewide memories, compatible with industry standard EPROMS.
I/O3
I/O4
•
DESCRIPTION
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
NC
I/O3
I/O4
I/O5
•
Access Time: 90ns
Simple Byte and Page Write
—Single 5V Supply
— No External High Voltages or VPP Control
Circuits
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
Low Power CMOS:
—Active: 50mA
—Standby: 500µA
Software Data Protection
—Protects Data Against System Level
Inadvertant Writes
High Speed Page Write Capability
Highly Reliable Direct Write™ Cell
—Endurance: 100,000 Write Cycles
—Data Retention: 100 Years
Early End of Write Detection
—DATA Polling
—Toggle Bit Polling
A12
A15
NC
NC
VCC
WE
NC
•
•
Two PLCC and LCC Pinouts
—X28C512
—X28C010 E2PROM Pin Compatible
—X28C513
—Compatible with Lower Density E2PROMs
3856 FHD F04
Characteristics subject to change without notice
