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2N139
2N1396 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)40ã V(BR)CBO (V)40 I(C) Max. (A)10m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)75’ I(CBO) Max. (A)12u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain. h(FE) Max. Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) h(fe) Min. SS Current gain.50 @I(C) (A) (Test Condition)1.5m @V(CE) (V) (Test Condition)12 @Freq. (Hz) (Test Condition)1.0k f(T) Min. (Hz) Transition Freq100M¦ @I(C) (A) (Test Condition)1.5m @V(CE) (V) (Test Condition)12 C(obo) (Max) (F)3.0p @V(CB) (V) (Test Condition)
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