1SS315
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
1SS315
UHF Band Mixer Applications
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VRM
5
V
Forward current
IF
30
mA
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Maximum (peak) reverse voltage
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 2 mA
⎯
0.25
⎯
V
Forward current
IF
VF = 0.5 V
30
⎯
⎯
mA
Reverse current
IR
VR = 0.5 V
⎯
⎯
25
μA
Total capacitance
CT
VR = 0.2 V, f = 1 MHz
⎯
0.6
⎯
pF
Marking
1
2007-11-01