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2SC3421-Y
2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • Unit: mm High breakdown voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 1 A Base current IB 100 mA Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.5 10 W Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA ― Note1: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-8H1A temperature/current/voltage and the significant change in Weight: 0.82 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
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