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MT29F8G08ABABAWP-IT:B

製品説明
仕様・特性

2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Figure 1: • Organization: • Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes) • Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks • Read performance: • Random read: 25µs • Sequential read: 30ns (3V x8 only) • Write performance: • Page program: 300µs (typ) • Block erase: 2ms (typ) • Endurance: PROGRAM/ERASE cycles (with ECC and invalid block mapping) • First block (block address 00h) guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles) • VCC: 2.7V–3.6V • Automated PROGRAM and ERASE • Basic NAND command set: • PAGE READ, RANDOM DATA READ, READ ID, READ STATUS, PROGRAM PAGE, RANDOM DATA INPUT, PROGRAM PAGE CACHE MODE, INTERNAL DATA MOVE, INTERNAL DATA MOVE with RANDOM DATA INPUT, BLOCK ERASE, RESET • New commands: • PAGE READ CACHE MODE • READ UNIQUE ID (contact factory) • READ ID2 (contact factory) • Operation status byte provides a software method of detecting: • PROGRAM/ERASE operation completion • PROGRAM/ERASE pass/fail condition • Write-protect status • Ready/busy# (R/B#) pin provides a hardware method of detecting PROGRAM or ERASE cycle completion • PRE pin: prefetch on power up • WP# pin: hardware write protect 09005aef818a56a7 pdf/09005aef81590bdd source 2gb_nand_m29b__1.fm - Rev. C 5/05 EN 48-PIN TSOP Type 1 Options Marking • Density: MT29F2GxxAAB 2Gb (single die) MT29F4GxxBAB 4Gb (dual-die stack) MT29F8GxxFAB 8Gb (quad-die stack) • Device width: MT29Fxx08x x8 MT29Fxx16x x16 • Configuration: # of die # of CE# # of R/B# 1 1 1 A 2 1 1 B 4 2 2 F A • VCC: 2.7V–3.6V • Second generation die B • Package: 48 TSOP type I (lead-free plating) WP 48 TSOP type I (contact factory) WG • Operating temperature: Commercial (0–70°C) — Extended temperature ET (-40°C to +85°C) 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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