LC03-6
PROTECTION PRODUCTS
Description
Low Capacitance TVS for High-Speed
Data Interfaces
Features
The LC03-6 transient voltage suppressor is designed to
protect components which are connected to high
speed telecommunication lines from voltage surges
caused by lightning, electrostatic discharge (ESD),
cable discharge events (CDE), and electrical fast
transients (EFT).
2000 watts peak pulse power (tp = 8/20µs)
Transient protection for high-speed data lines to
Bellcore 1089 (Intra-Building) 100A (2/10µs)
ITU K.20 IPP=40A (5/310µs)
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 100A (8/20µs)
Protects two lines in common and differential mode
Low capacitance for high-speed interfaces
Low clamping and operating voltage
Integrated structure saves board space and
increases reliability
Solid-state silicon avalanche technology
TVS diodes are ideal for use as board level protection
of sensitive semiconductor components. The LC03-6
combines a TVS diode with a rectifier bridge to provide
transient protection in both common and differential
mode with a single device. The capacitance of the
device is minimized (< 25pF) to ensure correct signal
transmission on high speed lines . The LC03-6 meets
the short-haul (intra-building) transient immunity
requirements of Bellcore 1089 for telecommunications
applications.
Mechanical Characteristics
JEDEC SO-8 package
RoHS/WEEE Compliant
UL 497B listed
Molding compound flammability rating: UL 94V-0
Marking : Part number, date code
Packaging : Tube or Tape and Reel per EIA 481
The SO-8 surface mount package allows flexibility in
the design of crowded PC boards.
Applications
T1/E1 Line Cards
T3/E3 and DS3 Interfaces
STS-1 Interfaces
ISDN S/T-Interfaces
ISDN U-Interfaces
10/100 Ethernet
Circuit Diagram
Schematic & PIN Configuration
1
8
2
7
3
6
4
5
Pin 1 and 8
Pin 2, 3, 6,
and 7
Ground
Pin 4 and 5
SO-8 (Top View)
Revision 01/18/2008
1
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LC03-6
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Power Derating Curve
100
110
Peak Pulse Power - Ppk (kW)
100
% of Rated Power or I
PP
90
10
1
80
70
60
50
40
30
20
10
0.1
0.1
1
10
100
0
1000
0
Pulse Duration - tp (µs)
90
125
150
175
18
16
Clamping Voltage - VC (V)
80
Percent of IPP
100
20
W aveform
Parameters:
tr = 8µs
td = 20µs
100
e -t
60
50
td = I PP /2
30
20
L in e-T o-L in e
14
12
L in e -T o -G rou n d
10
8
W a v efo rm
P ara m e ters :
tr = 8 µ s
td = 2 0 µ s
6
4
10
2
0
0
5
10
15
20
25
0
30
0
T im e (µs)
10
20
30
40
50
60
70
80
90
100
11 0
P e a k P u lse C u r re n t - I P P (A )
Normalized Capacitance vs. Reverse Voltage
Forward Voltage vs. Forward Current
1.4
6
1.2
5
Forward Voltage - VF (V)
1
C J(VR ) / C J(VR =0)
75
Clamping Voltage vs. Peak Pulse Current
110
40
50
Ambient Temperature - TA (oC)
Pulse Waveform
70
25
0.8
0.6
0.4
4
3
W a v efo rm
P ara m e ters :
tr = 8 µ s
td = 2 0 µ s
2
1
0.2
f = 1MHz
0
0
0
1
2008 Semtech Corp.
2
3
4
Reverse Voltage - VR (V)
5
6
0
10
20
30
40
50
60
70
80
90
100
11 0
F o r w a r d C u r r e n t - I F (A )
3
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