MA111
Schottky Barrier Diodes (SBD)
MA701, MA701A
Silicon epitaxial planer type
Unit : mm
For high-frequency rectification
4.0±0.5
3.0±0.2
s Features
q
Fast reverse recovery time trr, optimum for high-frequency rectifica-
1.5±0.1
Low forward rise voltage VF, optimum for low-voltage rectification
4.0±0.2
q
0.5±0.1
Cathode
Anode
tion
q
Low thermal resistance Rth(j-a). Small size, enabling large-current rec-
5.0±0.5
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter
Reverse voltage (DC)
Symbol
MA701
MA701
Repetitive peak
reverse voltage
Unit
20
V
40
20
VRRM
MA701A
0.4±0.2
Rating
VR
MA701A
0 to 0.14
1.5±0.2
0.3±0.1
0.7±0.1
tification
1 : Cathode
2 : Anode
Mini-Power Type Package (2-pin)
V
40
Peak forward current
IFM
2
A
Average forward current
1
A
Non-repetitive peak forward surge current
IF(AV)*1
IFSM*2
6
A
Junction temperature
Tj
125
˚C
Storage temperature
Tstg
– 55 to + 125
˚C
With a printed-circuit board (copper foil area cathode side) 2mm × 10mm or more
(copper foil area anode side) 1mm × 10mm or more. Board thickness t=1.6mm
*2 50Hz sine wave, one-cycle wave, high value (non-repetitive)
*1
s Electrical Characteristics (Ta= 25˚C)
Symbol
Parameter
Reverse current (DC)
MA701
MA701A
IR
Condition
min
typ
max
VR =20V
1
VR = 40V
2
0.55
Forward voltage (DC)
VF
IF = 1.0A
Terminal capacitance
Ct
VR = 0V, f=1MHz
Reverse recovery time
trr*2
Thermal resistance
Rth(j-a)*1
Unit
mA
V
210
14
IF = IR=100mA
Irr=10mA, RL=100Ω
pF
ns
0.15
˚C/mW
Note 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on charge of a human body and leakage
from the equipment used.
2. Rated input/output frequency : 150MHz
3. *1 With a printed-circuit board (copper foil area cathode side) 2mm × 10mm or more (copper foil area anode side) 1mm × 10mm or more.
Board thickness t=1.6mm
10mm
s Marking
K
Part Number
MA701
MA701A
Symbol
701
701A
10mm
A
2mm
1mm
