RN1301~RN1306
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1301, RN1302, RN1303
RN1304, RN1305, RN1306
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2301 to RN2306
Equivalent Circuit and Bias Resistor Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN1301
4.7
4.7
RN1302
10
10
RN1303
22
22
RN1304
47
47
RN1305
2.2
47
RN1306
4.7
47
USM
JEDEC
JEITA
TOSHIBA
Weight: 6 mg (typ.)
―
SC-70
2-2E1A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
RN1301 to 1306
RN1301 to 1304
RN1305, 1306
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Rating
Unit
VCBO
50
V
VCEO
50
V
10
VEBO
5
V
IC
RN1301 to 1306
100
mA
PC
100
mW
Tj
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1987-09
1
2014-03-01
