TH97/2478
1(B,G,J)4B42
TH09/2479
IATF 0060636
SGS TH07/1033
SILICON BRIDGE RECTIFIER
DFM
PRV : 100 ~ 600 Volts
Io : 1.0 Ampere
0.255(6.5)
0.245(6.2)
~
0.315(8.00)
0.285(7.24)
~
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
Pb / RoHS Free
0.335(8.51)
0.320(8.12)
0.255(6.5)
0.245(6.2)
0.122(3.10)
0.100(2.60)
0.045(1.14)
0.035(0.89)
0.185(4.69)
0.150(3.81)
0.205(5.2)
0.195(5.0)
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated Lead solderable per MIL-STD202, Method 208
* Polarity : Polarity symbols marked on body
* Mounting position : Any
* Weight : 0.42 gram
0.0130(0.33)
0.0086(0.22)
0.350(8.9)
0.300(7.6)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
60 Hz, resistive or inductive load.
RATING
SYMBOL
1B4B42
1G4B42
1J4B42
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
100
400
600
V
Maximum Average Forward Output Current
IF(AV)
Maximum Peak One Cycle Surge Forward
IFSM
Current ( Non-Repetitive )
Maximum Instantaneous Forward Voltage
1.0
30 ( 50Hz )
A
A
33 ( 60Hz )
VF
1.0
V
IR
10
µA
RθJA
75
°C/W
TJ
- 40 to + 150
°C
TSTG
- 40 to + 150
°C
per element at IF = 1.0 A
Maximum Repetitive Peak Reverse Current
at VRRM = Rated
Maximum Thermal Resistance (Junction to Ambient)
Junction Temperature
Storage Temperature Range
Page 1 of 2
Rev. 02 : March 25, 2005
