4AK19
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-727 (Z)
1st. Edition
Feb. 1999
Features
• Low on-resistance
N Channel : R DS(on) 0.5 Ω, VGS = 10V, ID = 2.5A
R DS(on) 0.6 Ω, VGS = 4V, ID = 2.5A
• 4V gate drive devices.
• High density mounting
Outline
SP-10
3
D
2G
1 S
5
D
4
G
7
D
6
G
12
34
56
78
9 10
9
D
8
G
S 10
1, 10.
Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain