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2SD2531
isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2531 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 1.0 (Max)@ IC= 2.5A ·High Power Dissipation: PC= 25W@ TC= 25℃ APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 1 A Collector Power Dissipation @ Ta=25℃ 2 PC W Collector Power Dissipation @ TC=25℃ TJ Tstg 25 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website:www.iscsemi.cn
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