RN2421~RN2427
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2421,RN2422,RN2423,RN2424
RN2425,RN2426,RN2427
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
High current type (IC(MAX) = −800mA)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Low VCE (sat)
Complementary to RN1421~RN1427
Equivalent Circuit and Bias Resistor Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN2421
1
1
RN2422
2.2
2.2
RN2423
4.7
4.7
RN2424
10
10
RN2425
0.47
10
JEDEC
RN2426
1
10
JEITA
SC-59
RN2427
2.2
10
TOSHIBA
2-3F1A
―
Weight: 0.012 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
Symbol
RN2421~2427
Rating
Unit
VCBO
−50
V
VCEO
−50
V
RN2421~2424
Emitter-Base voltage
RN2425, 2426
−10
VEBO
−5
−6
RN2427
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V
Ic
RN2421~2427
−800
mA
Pc
200
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
