APPLICATION NOTE
A V A I LABLE
AN56
X20C16
16K
2K x 8 Bit
High Speed AUTOSTORE™ NOVRAM
DESCRIPTION
• Fast access time: 35ns, 45ns, 55ns
• High reliability
—Endurance: 1,000,000 nonvolatile store
operations
—Retention: 100 years minimum
• AUTOSTORE NOVRAM
—Automatically stores RAM data into the
EEPROM array when VCC low threshold
is detected
—User enabled option
—Open drain autostore status output pin
• Power-on recall
—EEPROM data automatically recalled into RAM
upon power-up
• Software data protection
—Locks out inadvertent store operations
• Low power CMOS
—Standby: 250µA
• Infinite EEPROM array recall, and RAM read and
write cycles
The Xicor X20C16 is a 2K x 8 NOVRAM featuring a
high-speed static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM (EEPROM) and
the AUTOSTORE feature which automatically saves
the RAM contents to EEPROM at power-down. The
X20C16 is fabricated with advanced CMOS floating
gate technology to achieve high speed with low power
and wide power-supply margin. The X20C16 features
a compatible JEDEC approved pinout for byte-wide
memories, for industry standard RAMs, ROMs,
EPROMs, and EEPROMs.
ro
du
c
t
FEATURES
P
e
et
VCC Sense
EEPROM Array
AL
EC
E
ST
O
R
High Speed
2K x 8
SRAM
Array
R
Row
Select
A3–A8
O
AS
Xicor NOVRAMS are designed for unlimited write
operations to RAM, either from the host or recalls from
EEPROM, and a minimum 1,000,000 store operations
to the EEPROM. Data retention is specified to be
greater than 100 years.
L
bs
ol
BLOCK DIAGRAM
The NOVRAM design allows data to be easily transferred from RAM to EEPROM (store) and EEPROM to
RAM (recall). The store operation is completed in 5ms
or less and the recall operation is completed in 10µs or
less. An automatic array recall operation reloads the
contents of the EEPROM into RAM upon power-up.
CE
OE
WE
Control
Logic
Column Select
&
I/OS
NE
A0–A2
A9–A10
I/O0–I/O7
REV 1.0 6/21/00
www.xicor.com
Characteristics subject to change without notice.
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