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M93S46BN5
M93S66, M93S56, M93S46 4K/2K/1K (x16) Serial Microwire Bus EEPROM with Block Protection INDUSTRY STANDARD MICROWIRE BUS 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SINGLE ORGANIZATION by WORD (x16) WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for M93Sx6 version – 2.5V to 5.5V for M93Sx6-W version – 1.8V to 3.6V for M93Sx6-R version USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 words) SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ENHANCED ESD and LATCH-UP PERFORMANCES DESCRIPTION This M93S46/S56/S66 specification covers a range of 4K/2K/1K bit serial EEPROM products respectively. In this text, products are referred to as M93Sx6. The M93Sx6 is an Electrically Erasable Programmable Memory (EEPROM) fabricated with STMicroelectronics’s High Endurance Single Polysilicon CMOS technology. Table 1. Signal Names S Chip Select Input D Serial Data Input Q Serial Clock PRE Write Enable VCC 8 1 TSSOP8 (DW) 169mil Width Figure 1. Logic Diagram VCC D C Q M93Sx6 Supply Voltage VSS SO8 (MN) 150mil Width PSDIP8 (BN) 0.25mm Frame Protect Enable W 1 1 Serial Data Output C 8 8 Ground S PRE W VSS AI02020 February 1999 1/23
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