RN2412,RN2413
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2412, RN2413
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit in mm
With built-in bias resistors
Simplified circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1412, RN1413
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characterisstic
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Tstg
−55~150
°C
Storage temperature range
TO-236MOD
JEDEC
SC-59
JEITA
2-3F1A
TOSHIBA
Weight: 0.012g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
Collector cut-off current
ICBO
―
Emitter cut-off current
IEBO
DC current gain
Characteristic
Collector output capacitance
Input resistor
RN2412
RN2413
Typ.
Max
Unit
VCB = −50 V, IE = 0
―
―
−100
nA
―
VEB = −5 V, IC = 0
―
―
−100
nA
―
VCE = −5 V, IC = −1 mA
120
―
400
―
VCE (sat)
―
IC = −5 mA, IB = −0.25 mA
―
−0.1
−0.3
V
fT
Translation frequency
Min
hFE
Collector-emitter saturation voltage
Test Condition
―
VCE = −10 V, IC = −5 mA
―
200
―
MHz
Cob
―
VCB = −10 V, IE = 0, f = 1 MHz
―
3
6
pF
R1
―
―
15.4
22
28.6
32.9
47
61.1
1
kΩ
2007-11-01