Si Phototransistor
KPT801C
KPT801C
Features
• NPN phototransistor
C7
+0.3
ø2.96 –0.1
Transparent
epoxy resin
Black Ceramic
2.0
• Low leak current
+0.3
3.2 –0.2
• Ceramic package
• Optical switches
ø0.45
• Optical encoders
ø0.3
15.5±1.0
Applications
• Photo-isolators
0.9
• Camera stroboscopes
• Infrared sensors
• Automatic control apparatus
1 Emitter
2 Collector
Maximum ratings
Item
Symbol
Value
Units
Collector•Emitter Vol.
Vceo
20
V
Emitter•Collector Vol.
Veco
5
V
Collector•Base Vol.
Vcbo
-
V
Emitter•Base Vol.
Vebo
-
V
Operating Temperature
Topr
-20 ~ +80
˚C
Storage Temperature
Tstg
-30 ~ +100
˚C
Characteristics ( T a = 2 5 °C unless otherwise noted.)
Parameter
Symbol
Min.
Ty p .
Max.
Units
S
0.64x0.64
mm
Operating Voltage
V RO
5
V
Sensitive Wavelength
λ
Photocurrent
IL
4
Dark Current
Iceo
100
Current Amplification Factor
hFE
Te s t C o n d i t i o n s
Active Area
Collector•Emitter
Saturation Voltage
Rise/Fall Time
400
800( λ p )
λ p = Peak wavelength
Vce=5V, 100lux(@2856K)
nA
Vce=20V
Vce=5V, Ic=2mA
600
Vce(sat)
t r, t f
200
nm
mA
1000
5
V
I c = 1 mA
µs
0.4
Vce= 5 V, IC=2mA, RL=100ΩΩ
Kyosemi Corporation
1
2
(Units: mm)
