Power Transistors
2SC3874
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
M
Di ain
sc te
on na
tin nc
ue e/
d
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
Parameter
Symbol
Collector to base voltage
(TC=25˚C)
Ratings
VCBO
500
VCEO
Collector current
IC
Base current
IB
dissipation
Parameter
–55 to +150
Forward current transfer ratio
4.0
2.0
2.0
10.0
26.0±0.5
˚C
(TC=25˚C)
Di
sc
e/
nc
te
na
Collector to emitter voltage
M
ain
˚C
Conditions
Symbol
Collector cutoff current
Emitter cutoff current
150
on
s Electrical Characteristics
3
ue
Tstg
2
W
3.5
Tj
Storage temperature
A
1
1:Base
2:Collector
3:Emitter
TOP–3L Package
tin
Junction temperature
0.6±0.2
5.45±0.3
A
150
PC
Ta=25°C
A
1.0±0.2
V
5
ICP
2.7±0.3
10.9±0.5
V
7
15
Peak collector current
400
VEBO
1.5
2.0±0.3
3.0±0.3
V
25
Emitter to base voltage
Collector power TC=25°C
V
500
VCES
Collector to emitter voltage
Unit
1.5
Solder Dip
s Absolute Maximum Ratings
1.5
q
20.0±0.5
2.5
q
High-speed switching
High collector to base voltage VCBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio hFE
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ICBO
IEBO
VCEO
hFE1
hFE2
Collector to emitter saturation voltage
VCE(sat)
Base to emitter saturation voltage
VBE(sat)
Transition frequency
fT
Turn-on time
ton
Storage time
tstg
Fall time
tf
min
typ
VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
Unit
100
µA
100
µA
15
VCE = 5V, IC = 10A
max
400
8
V
IC = 10A, IB = 2A
1.0
V
IC = 10A, IB = 2A
1.5
V
Pl
q
6.0
s Features
3.0
20.0±0.5
VCE = 10V, IC = 1A, f = 1MHz
IC = 10A, IB1 = 2A, IB2 = –4A,
VCC = 150V
20
MHz
0.7
µs
2.0
µs
0.3
µs
1