, One,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA1187
Silicon PNP Power Transistor
DESCRIPTION
• High Collector-Emitter Breakdown VoltagePIN 1.BASE
V(BR)CEO= -150V(Min)
2.COLLECTOR
• Good Linearity of hFE
3. EMITTER
• Complement to Type 2SC2838
1
MT-200 package
2 3
APPLICATIONS
• For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-12
A
IB
Base Current-Continuous
-3
A
PC
Collector Power Dissipation
@ TC=25'C
120
W
Junction Temperature
150
Tj
mm
DIM
WIN
MAX
A 21.00 21.70
B 35-80 36-70
5.60
6-20
C
1.04
1.07
D
3.10
F
3-50
G uJ±??_ 2.40
3-60
4.00
H
0.85
0.55
J
K 20.00 20.80
L
N
'C
Q
R
S
Tstg
Storage Temperature Range
-55-150
°c
U
Y |
2.90;
10.50
24.00
2.90
2.00
6.90
8.90
3-40
11.10
24.SO
3.30
2.20
7.10
9,10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. InFormation Furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time oFgoing
to press. However, NJ Semi-Conductors assumes no responsibility For any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
