STB12NK80Z, STF12NK80Z,
STP12NK80Z, STW12NK80Z
N-channel 800 V, 0.65Ω typ., 10.5 A Zener-protected SuperMESH™
Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247
Datasheet — production data
Features
TAB
VDSS
RDS(on)
(@Tjmax)
Type
STB12NK80Z
STF12NK80Z
800V
800V
ID
PW
3
1
<0.75Ω 10.5 A 190W
<0.75Ω 10.5 A
3
D2PAK
40W
2
1
TO-220FP
TAB
STP12NK80Z
800V
<0.75Ω 10.5 A 190W
STW12NK80Z
800V
<0.75Ω 10.5 A 190W
■
Extremely high dv/dt capability
■
Improved esd capability
■
100% avalanche tested
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing reliability
3
1
TO-247
TO-220
Figure 1.
Internal schematic diagram
D(2,TAB)
Applications
■
2
Switching applications
Description
G(1)
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in onresistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Table 1.
S(3)
AM01476v1
Device summary
Order codes
Marking
Package
Packaging
STB12NK80Z
12NK80Z
D2PAK
Tape and reel
STF12NK80Z
12NK80Z
TO-220FP
Tube
STP12NK80Z
12NK80Z
TO-220
Tube
STW12NK80Z
12NK80Z
TO-247
Tube
August 2012
This is information on a product in full production.
Doc ID 9567 Rev 7
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www.st.com
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