JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92
2SC2551
Plastic-Encapsulate Transistors
TO-92
TRANSISTOR (NPN)
1. EMITTER
FEATURES
High voltage
Low saturation voltage
Small collector output capacitance
Complementary to 2SA1091
2. COLLECTOR
3.
BASE
1 2 3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
100
mA
PC
Collector power dissipation
400
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=100uA, IE=0
300
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=1mA, IB=0
300
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=300V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=6V, IC=0
0.1
μA
hFE(1)
VCE=10V, IC=20mA
30
hFE(2)
VCE=10V, IC=1mA
20
Collector-emitter saturation voltage
VCE(sat)
IC=20mA, IB=2mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=20mA, IB=2mA
1.2
V
fT
VCE=10V, IC=20mA
DC current gain
Transition frequency
Collector output capacitance
Cob
80
VCB=20V,IE=0,f=1MHz
Range
MHz
4
CLASSIFICATION OF hFE(1)
Rank
150
R
O
30-90
50-150
pF
