Advance Technical Data
HiPerFASTTM
IGBT with Diode
VCES
IXGN 60N60C2
IXGN60N60C2D1 IC25
VCE(sat)
C2-Class High Speed IGBTs
tfi(typ)
E
Symbol
V CES
D1
E
Test Conditions
TJ = 25°C to 150°C
Maximum Ratings
600
VCGR
TJ = 25°C to 150°C; RGE = 1 MW
= 600 V
= 75 A
= 2.5 V
= 35 ns
600
SOT-227B, miniBLOC
E
V
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C (limited by leads)
100
A
IC110
TC = 110°C
60
A
ICM
TC = 25°C, 1 ms
300
A
SSOA
VGE = 15 V, TVJ = 125°C, RG = 10 W
ICM = 100
A
(RBSOA)
Clamped inductive load @ VCE ≤ 600 V
PC
TC = 25°C
G
E
480
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
2500
3000
V~
V~
TJ
VISOL
50/60 Hz
IISOL ≤ 1 mA
t = 1 min
t=1s
Md
Mounting torque
Terminal connection torque (M4)
1.15/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
Symbol
Test Conditions
VGE(th)
IC
ICES
VCE = VCES
VGE = 0 V
IGES
IC = 50 A, VGE = 15 V
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VCE = 0 V, VGE = ±20 V
VCE(sat)
= 250 mA, VCE = VGE
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g
3.0
5.0
650
5
TJ = 25°C
TJ = 125°C
2.1
1.8
mA
mA
±100
TJ = 25°C
TJ = 125°C
V
nA
2.5
V
V
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
International standard package
miniBLOC
Aluminium nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Very high current IGBT
Low VCE(sat) for minimum on-state
conduction losses
MOS Gate turn-on
- drive simplicity
Low collector-to-case capacitance
(< 50 pF)
Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with 2 screws
Space savings
High power density
DS990177(06/04)
