Zener Diodes for Surge Absorption
Absorbing surges from bi-direction
Aug 2006
RKZ6.8T Series is High ESD Level Guaranteed Bidirectional Zener Diode for Surge Absorption,
Which Achieve the Surge Absorption of Two Directions with Two-terminal Package.
What is the Bidirectional Zener Diode?
Both Forward and Reverse Directions Achieve Same Zener Diode Characteristics
Both forward and reverse directions have reverse direction characteristics of normal zener diode for surge absorption.
1.E-02
Iz
1.E-03
1.E-04
1.E-05
Forward
I [A]
1.E-06
0
-Vz
Vz
Reverse
1.E-07
1.E-08
Internal circuit
1.E-09
1.E-10
1.E-11
-Iz
Features
0
1
2
3
4
V [V]
5
6
7
8
Two Directions Surge Absorption with 1 Chip (Smaller mounting area and lower mounting cost)
The surge absorption of 2 directions used to be applied with 2 chips/3 terminals packages. However the bidirectional
zener diode can achieve them by one this product and also achieve the reduction of mounting area and the cost.
Mounting area
about 1/5
MPAK (2.8 x 1.5)
Mounting area
about 1/7
UFP (1.2 x 0.8)
SFP (1.0 x 0.6)
High ESD Level Guaranteed (25kV)
Available using in a wide range of fields because both forward and reverse directions are high ESD level.
Electrical characteristics of RKZ6.8TKJ/RKZ6.8TKK
Part No.
RKZ6.8TKJ
SFP
Reverse current
5.8~7.8
@ Iz=5mA
UFP
RKZ6.8TKK
Zener voltage
Vz (V)
PKG
0.5 max
@VR=3.5V
IR (µA)
25 min
@C=150pF/R=330Ω
Each forward/reverse
10 times applied
ESD: Electrostatic Discharge
Application
- Absorb foreign surges (LED, IC, etc.)
- Noise limiter (Bus line)
RKZ6.8TKJ
RKZ6.8TKK
Application Example (Fig.1)
The circuit absorbs a foreign surge that
getting into LED matrix module.
LED
Fig.1
Renesas Technology Corp. URL http://www.renesas.com/en/diode
REJ01G0005-0100
ESD intensity
(kV)
©2006. Renesas Technology Corp., All rights reserved.