KSC1815
KSC1815
Audio Frequency Amplifier & High
Frequency OSC
• Complement to KSA1015
• Collector-Base Voltage : VCBO= 50V
TO-92
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
60
Units
V
VCEO
VEBO
Collector-Emitter Voltage
50
V
Emitter-Base Voltage
5
IC
Collector Current
V
150
mA
IB
Base Current
50
mA
PC
Collector Power Dissipation
400
mW
TJ
Junction Temperature
125
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Condition
VCB=60V, IE=0
IEBO
Emitter Cut-off Current
DC Current Gain
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE (sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC=100mA, IB=10mA
fT
Current Gain Bandwidth Product
VCE=10V, IC=1mA
70
25
Max.
0.1
Units
µA
0.1
IC=100mA, IB=10mA
VBE (sat)
Typ.
VEB=5V, IC=0
hFE1
hFE2
Min.
µA
700
0.1
0.25
V
1.0
V
80
MHz
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
2.0
3.0
pF
NF
Noise Figure
VCE=6V, IC=0.1mA
RS=10kΩ, f=1Hz
1.0
1.0
dB
hFE Classification
Classification
O
Y
GR
L
hFE1
70 ~ 140
120 ~ 240
200 ~ 400
350 ~ 700
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
