JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
KTC3198
TRANSISTOR (NPN)
1.EMITTER
FEATURES
General Purpose Switching Application
Complementary to KTA1266.
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbo
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
0.15
A
PC
Collector Power Dissipation
0.625
W
200
℃/W
RθJA
Thermal Resistance From Junction To Ambient
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 0.1mA ,IE=0
60
V
Collector-emitter breakdown voltage
V(BR) CEO
IC=5mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=0.1mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
hFE(1)
VCE=6V, IC=2mA
70
hFE(2)
VCE=6V, IC=150mA
25
Collector-emitter saturation voltage
VCE(sat)
IC=100mA,IB=10mA
Base-emitter saturation voltage
VBE(sat)
IC=100mA,IB=10mA
DC current gain
fT
Transition frequency
Collector Output Capacitance
0.25
1
VCE=10V,IC=1mA
Cob
700
80
VCB=10V, IE=0, f=1MHz
V
V
MHz
3.5
pF
CLASSIFICATION OF hFE(1)
RANK
O
Y
GR
BL
RANGE
70-140
120-240
200-400
300-700
A,Dec,2010
