SUM110P08-11L
Vishay Siliconix
P-Channel 80 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 80
b
RDS(on) ()
ID (A)
0.0112 at VGS = - 10 V
- 110
0.0145 at VGS = - 4.5 V
- 109
Qg (Typ)
85 nC
• TrenchFET® Power MOSFET
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
TO-263
S
G
Drain Connected to Tab
G
D
S
Top View
D
Ordering Information: SUM110P08-11L-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 80
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TA = 25 °C
- 71
ID
- 23.5b, c
- 13.6b, c
TA = 125 °C
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
TC = 25 °C
TA = 25 °C
L = 0.1 mH
Single-Pulse Avalanche Energy
TC = 125 °C
TA = 25 °C
- 110
IS
- 9b, c
IAS
- 75
EAS
281
mJ
375
125
PD
W
13.6b, c
4.5b, c
TA = 125 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 120
TC = 25 °C
Maximum Power Dissipation
V
- 110a
TC = 25 °C
TC = 125 °C
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Case (Drain)
Typical
Maximum
t 10 s
Maximum Junction-to-Ambientb, d
RthJA
8
11
Steady State
RthJC
0.33
0.4
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 40 °C/W.
Document Number: 73471
S12-3071-Rev. C, 24-Dec-12
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
