2SJ610
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
2SJ610
Switching Regulator, DC/DC Converter and
Motor Drive Applications
Unit: mm
1.5 ± 0.2
6.5 ± 0.2
5.2 ± 0.2
•
0.6 MAX.
High forward transfer admittance: |Yfs| = 18 S (typ.)
Low leakage current: IDSS = −100 μA (VDS = −250 V)
Enhancement mode: Vth = −1.5 to −3.5 V (VDS = 10 V, ID = 1 mA)
1.2 MAX.
•
•
5.5 ± 0.2
Low drain-source ON-resistance: RDS (ON) = 1.85 Ω (typ.)
Absolute Maximum Ratings (Ta = 25°C)
1.1 ± 0.2
0.8 MAX.
Drain-source voltage
VDSS
−250
VDGR
−250
VGSS
±20
V
(Note 1)
ID
−2.0
Pulse (t = 1 ms)
(Note 1)
IDP
−4.0
Drain power dissipation
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
180
mJ
Avalanche current
IAR
−2.0
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
3
V
Gate-source voltage
2
V
Drain-gate voltage (RGS = 20 kΩ)
1
Unit
2.3 ± 0.2
Rating
°C
DC
Drain current
A
0.1 ± 0.1
Symbol
0.6 MAX.
1.05 MAX.
0.6 ± 0.15
Characteristic
9.5 ± 0.3
•
2.3 ± 0.15 2.3 ± 0.15
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
2
1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 75 mH, IAR = −2.0 A,
RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2010-02-05
