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TC7SH32FUTE85L,F

製品説明
仕様・特性

TC7SH32F/FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH32F, TC7SH32FU 2-Input OR Gate Features TC7SH32F • High speed operation : tpd = 3.8ns (typ.) at VCC = 5V, 15pF • Low power dissipation : ICC = 2μA (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28% VCC (min) • 5.5-V tolerant inputs • Wide operating voltage range : VCC= 2 to 5.5V TC7SH32FU Marking Product name H 4 Weight SSOP5-P-0.95 : 0.016 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage VCC −0.5 to 7 V DC input voltage VIN −0.5 to 7 V DC output voltage VOUT −0.5 to VCC + 0.5 V Input diode current IIK −20 mA Output diode current IOK ±20 DC output current IOUT ±25 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 200 mW Storage temperature Tstg −65 to 150 °C TL 260 °C Lead temperature (10 s) (Note1) mA Pin Assignment (top view) IN B 1 IN A 2 GND 3 5 VCC 4 OUT Y Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: VOUT < GND, VOUT > VCC 1 2009-09-09 TC7SH32F/FU Electrical Characteristics DC Characteristics Characteristics Symbol VIH ⎯ Ta = 25°C Test Condition Ta = −40 to 85°C Typ. Max Min Max 2.0 1.5 ⎯ ⎯ 1.5 3.0 to 5.5 VCC × 0.7 ⎯ ⎯ VCC × 0.7 ⎯ 2.0 ⎯ ⎯ 0.5 ⎯ 0.5 3.0 to 5.5 ⎯ ⎯ VCC × 0.3 ⎯ VCC × 0.3 1.9 2.0 ⎯ 1.9 ⎯ 3.0 2.9 3.0 ⎯ 2.9 ⎯ 4.5 4.4 4.5 ⎯ 4.4 ⎯ 3.0 2.58 ⎯ ⎯ 2.48 ⎯ IOH = −8 mA 4.5 3.94 ⎯ ⎯ 3.80 ⎯ 2.0 ⎯ 0 0.1 ⎯ 0.1 3.0 ⎯ 0 0.1 ⎯ 0.1 4.5 ⎯ 0 0.1 ⎯ 0.1 IOL = 4 mA 3.0 ⎯ ⎯ 0.36 ⎯ 0.44 IOL = 8 mA 4.5 ⎯ ⎯ 0.36 ⎯ 0.44 ⎯ VIL IOH = −50 μA High-level output voltage VOH VIN = VIH or VIL IOL = 50 μA Low-level output voltage VOL Unit ⎯ IOH = −4 mA Low-level input voltage Min 2.0 High-level input voltage VCC (V) VIN = VIL V V Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA Quiescent supply current ICC VIN = VCC or GND 5.5 ⎯ ⎯ 2.0 ⎯ 20.0 μA 3 2009-09-09

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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TC7SH32FU(TE85L,F) 2822個 05+ PBF

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