FSS162
Ordering number : ENA0348
SANYO Semiconductors
DATA SHEET
FSS162
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•
•
Low ON-resistance.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--30
Gate-to-Source Voltage
VGSS
±20
V
--8
A
Duty cycle≤1%
--10
A
Duty cycle≤1%
--52
A
Mounted on a ceramic board (1200mm2!0.8mm), PW≤10s
2.4
W
Drain Current (DC)
ID
Drain Current (PW≤10s)
Drain Current (PW≤10µs)
Allowable Power Dissipation
ID
IDP
PD
V
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Symbol
Ratings
min
typ
Unit
max
Zero-Gate Voltage Drain Current
IDSS
ID=--1mA, VGS=0V
VDS=-30V, VGS=0V
Gate-to-Source Leakage Current
Forward Transfer Admittance
IGSS
VGS(off)
yfs
VGS= ±16V, VDS=0V
VDS=-10V, ID=--1mA
VDS=-10V, ID=-8A
ID=--8A, VGS=-10V
ID=--4A, VGS=-4.5V
18
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
26
37
mΩ
ID=--4A, VGS=-4V
VDS=-10V, f=1MHz
30
43
mΩ
Input Capacitance
RDS(on)3
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=-10V, f=1MHz
VDS=-10V, f=1MHz
Cutoff Voltage
Marking : S162
V(BR)DSS
Conditions
--30
V
--1
±10
9
µA
--2.4
--1.0
µA
V
15
S
24
mΩ
2500
pF
460
pF
370
pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71206 / 40506PA MS IM TB-00002255 No. A0348-1/4