TC7WHU04FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WHU04FU, TC7WHU04FK
Triple Inverter(Un-Buffer)
Features
TC7WHU04FU
•
•
Low power dissipation: ICC = 2 μA (max) at Ta = 25°C
•
High noise immunity: VNIH = VNIL = 10% VCC (min)
•
(SM8)
High speed: tpd = 3.5 ns (typ.) at VCC = 5 V, CL = 15pF
5.5-V Tolerant inputs.
•
Wide operating voltage range: VCC = 2 to 5.5 V
•
Balanced propagation delays: tpLH ≈
•
Identical pin assignment and function with TC7WU04
tpHL
TC7WHU04FK
Marking
SM8
HU04
Product Name
Lot No.
US8
(US8)
WH
U04
Weight
SSOP8-P-0.65: 0.02 g (typ.)
SSOP8-P-0.50A: 0.01 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
−0.5 to 7.0
V
DC input voltage
VIN
−0.5 to 7.0
V
DC output voltage
VOUT
−0.5 to VCC + 0.5
V
Input diode current
IIK
−20
mA
Output diode current
IOK
±20 (Note 1)
mA
DC output current
IOUT
±25
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
300 (SM8)
200 (US8)
mW
Storage temperature
Tstg
−65 to 150
°C
TL
260
°C
Lead temperature (10 s)
Pin Assignment (top view)
1A
1
8 VCC
3Y
2
7
1Y
2A
3
6
3A
GND
4
5 Y2
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VOUT < GND, VOUT > VCC
Start of commercial production
1998-03
1
2014-10-23
TC7WHU04FU/FK
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
High-level input voltage
VIH
Low-level input voltage
VIL
Ta = 25°C
Test Condition
Ta = −40 to 85°C
Typ.
Max
Min
Max
1.7
1.7
3.0 to
5.5
VCC
× 0.8
VCC
× 0.8
0.3
0.3
3.0 to
5.5
VCC
× 0.2
VCC
× 0.2
2.0
1.8
2.0
1.8
3.0
2.7
3.0
2.7
4.5
4.0
4.5
4.0
IOH = −4 mA
3.0
2.58
2.48
IOH = −8 mA
4.5
3.94
3.80
2.0
0.0
0.2
0.2
3.0
0.0
0.3
0.3
4.5
0.0
0.5
0.5
IOL = 4 mA
3.0
0.36
0.44
IOL = 8 mA
4.5
0.36
0.44
VIN = VIL
IOH = −50 μA
VOH
VIN = GND
VIN = VIH
IOL = 50 μA
VOL
VIN = VCC
Unit
2.0
Low-level output voltage
Min
2.0
High-level output voltage
VCC (V)
V
V
V
V
Input leakage current
IIN
VIN = 5.5 V or GND
0 to 5.5
±0.1
±1.0
μA
Quiescent supply current
ICC
VIN = VCC or GND
5.5
2.0
20.0
μA
3
2014-10-23
