Specifications GAL22V10
GAL22V10
High Performance E2CMOS PLD
Generic Array Logic™
Functional Block Diagram
Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY
— 4 ns Maximum Propagation Delay
— Fmax = 250 MHz
— 3.5 ns Maximum from Clock Input to Data Output
— UltraMOS® Advanced CMOS Technology
RESET
I/CLK
8
OLMC
I/O/Q
OLMC
I/O/Q
OLMC
I/O/Q
OLMC
I/O/Q
OLMC
I/O/Q
OLMC
I/O/Q
OLMC
I/O/Q
OLMC
I/O/Q
OLMC
I/O/Q
OLMC
I/O/Q
I
10
I
• ACTIVE PULL-UPS ON ALL PINS
12
• COMPATIBLE WITH STANDARD 22V10 DEVICES
— Fully Function/Fuse-Map/Parametric Compatible
with Bipolar and UVCMOS 22V10 Devices
• 50% to 75% REDUCTION IN POWER VERSUS BIPOLAR
— 90mA Typical Icc on Low Power Device
— 45mA Typical Icc on Quarter Power Device
PROGRAMMABLE
AND-ARRAY
(132X44)
I
I
I
• E2 CELL TECHNOLOGY
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
I
I
• TEN OUTPUT LOGIC MACROCELLS
— Maximum Flexibility for Complex Logic Designs
I
• PRELOAD AND POWER-ON RESET OF REGISTERS
— 100% Functional Testability
16
16
14
12
I
• APPLICATIONS INCLUDE:
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
14
10
I
8
I
PRESET
Pin Configuration
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
ESCRIPTION
4
I
The GAL22V10, at 4ns maximum propagation delay time, combines
a high performance CMOS process with Electrically Erasable (E2)
floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows
the GAL22V10 to consume much less power when compared to
bipolar 22V10 devices. E2 technology offers high speed (<100ms)
erase times, providing the ability to reprogram or reconfigure the
device quickly and efficiently.
2
I/O/Q
28
I/O/Q
Vcc
I/CLK
NC
I
Description
I
PLCC
DIP
26
5
25
I/O/Q
I
I
I/O/Q
7
GAL22V10
NC
I
Top View
9
The generic architecture provides maximum design flexibility by
allowing the Output Logic Macrocell (OLMC) to be configured by
the user. The GAL22V10 is fully function/fuse map/parametric compatible with standard bipolar and CMOS 22V10 devices.
21
I/O/Q
I
I/O/Q
13
18
12
6
I/O/Q
18
I/O/Q
I/O/Q
I
I/O/Q
I
I/O/Q
I/O/Q
GND
12
13
I
I
I
I
I
I
GND
I
I
6
I
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/OE
I/O/Q
I/O/Q
Vcc
24
I/O/Q
I
Top View
1
I
I
GAL22V10
I/CLK
I
I
I
I/O/Q
GAL
22V10
I
I
I/O/Q
I
I/O/Q
NC
I/O/Q
SOIC
Unique test circuitry and reprogrammable cells allow complete AC,
DC, and functional testing during manufacture. As a result, Lattice Semiconductor delivers 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and
data retention in excess of 20 years are specified.
Vcc
I
I/O/Q
19
18
16
GND
I
14
I
12
24
I/O/Q
I/O/Q
11
1
NC
23
I
I
I/CLK
Copyright © 2001 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject
to change without notice.
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.
Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com
22v10_07
1
May 2001
