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RHU002N06T106
4V Drive Nch MOSFET RHU002N06 Structure Silicon N-channel MOSFET transistor Dimensions (Unit : mm) UMT3 2.0 0.9 0.2 0.3 0.7 1.25 (2) (1) 0.1Min. Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Drive circuits can be simple. 6) Parallel use is easy. 2.1 (3) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions (2) Gate Abbreviated symbol : KP (3) Drain Applications Switching Packaging specifications Equivalent circuit Package Taping Code T106 Basic ordering unit (pieces) Type (3) 3000 RHU002N06 ∗2 (2) ∗1 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 V Continuous ID ±200 mA Pulsed IDP ∗1 ±800 IS 200 mA Pulsed ISP ∗1 (1) Source (2) Gate (3) Drain mA Continuous ∗1 ESD PROTECTION DIODE (1) ∗2 BODY DIODE Drain current Source current (Body diode) PD Total power dissipation ∗2 800 gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are exceeded. mA 200 ∗ A protection diode has been built in between the mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended Thermal resistance Parameter Channel to ambient Symbol Rth (ch-a) ∗ Limits 625 Unit °C / W ∗ With each pin mounted on the recommended land. www.rohm.com c ○ 2012 ROHM Co., Ltd. All rights reserved. 1/3 2012.05 - Rev.C
ROHM
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日本
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