128Mb: x16, x32
MOBILE SDRAM
SYNCHRONOUS
DRAM
MT48LC8M16LFF4, MT48V8M16LFF4,
MT48LC8M16TG, MT48V8M16TG,
MT48V8M16P, MT48LC4M32LFF5,
MT48V4M32LFF5
Features
Table 1:
• Temperature Compensated Self Refresh (TCSR)
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal pipelined operation; column address can
be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto Precharge, includes CONCURRENT auto
precharge, and Auto Refresh Modes
• Self Refresh Mode; standard and low power
• 64ms, 4,096-cycle refresh
• LVTTL-compatible inputs and outputs
• Low voltage power supply
• Partial Array Self Refresh power-saving mode
Options
• VDD/VDDQ
3.3V/3.3V
2.5V/2.5V – 1.8V
• Configurations
8 Meg x 16 (2 Meg x 16 x 4 banks)
4 Meg x 32 (1 Meg x 32 x 4 banks)
• Package/Ball out
54-ball VFBGA (8mm x 8mm)1
54-ball VFBGA (8mm x 8mm)1 Lead-Free
90-ball VFBGA (8mm x 13mm)2
90-ball VFBGA (8mm x 13mm)2 Lead-Free
54-Pin TSOP II (400 mil)
54-Pin TSOP II (400 mil) Lead-Free
• Timing (Cycle Time)
7.5ns @ CL = 3 (133 MHz)
8ns @ CL = 3 (125 MHz)
10ns @ CL = 3 (100 MHz)
• Temperature
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
Extended (-25°C to +75°C)
NOTE:
Configurations
8 MEG X 16
2 Meg x 16 x 4
banks
4K
4K (A0–A11)
Marking
Table 2:
4 (BA0, BA1)
512 (A0–A8)
Refresh Count
Row
Addressing
Bank
Addressing
Column
Addressing
1 Meg x 32 x 4
banks
4K
4K (A0–A11)
4 (BA0, BA1)
Configuration
4 MEG X 32
256 (A0–A7)
Key Timing Parameters
CL = CAS (READ) latency
LC
V
ACCESS TIME
SPEED
CLOCK
GRADE FREQUENCY CL = 1 CL = 2 CL = 3 tRCD
8M16
4M32
-75M
-8
-10
-75M
-8
-10
-8
-10
F4
B4
F5
B5
TG
P
-75M
-8
-10
133MHz
125 MHz
100 MHz
100MHz
100 MHz
83 MHz
50 MHz
40 MHz
–
–
–
–
19ns
22ns
–
–
6
8ns
8ns
–
–
5.4
7ns
7ns
–
–
–
–
19ns
20ns
20ns
19ns
20ns
20ns
20ns
20ns
tRP
19ns
20ns
20ns
19ns
20ns
20ns
20ns
20ns
Part Number Example:
MT48V8M16LFB5-8
None
IT
XT
1. x16 only.
2. x32 only.
09005aef8071a76b
128Mbx16x32Mobile_1.fm - Rev. J 7/04 EN
1
©2001 Micron Technology, Inc. All rights reserved.