SSM3J317T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J317T
○ Power Management Switch Applications
○ High-Speed Switching Applications
Unit: mm
1.8-V drive
Low ON-resistance: Ron = 306 mΩ (max) (@VGS = -1.8 V)
: Ron = 144 mΩ (max) (@VGS = -2.8 V)
: Ron = 107 mΩ (max) (@VGS = -4.5 V)
+0.2
2.8-0.3
±8
ID
(Note 1)
-3.6
Pulse
IDP (Note 1)
-7.2
PD (Note 2)
700
Drain power dissipation
0.4±0.1
V
VGSS
DC
Drain current
２
t = 5s
A
mW
1400
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
３
0.16±0.05
V
0.15
-20
１
0～0.1
Gate-Source voltage
Unit
VDSS
Drain-Source voltage
Rating
1.9±0.2
Symbol
0.7±0.05
Characteristics
2.9±0.2
Absolute Maximum Ratings (Ta = 25°C)
0.95
+0.2
1.6-0.1
0.95
•
•
°C
1: Gate
2: Source
Note: Using continuously under heavy loads (e.g. the application of
TSM
3: Drain
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEDEC
―
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEITA
―
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
TOSHIBA
2-3S1A
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
Weight: 10 mg (typ.)
etc).
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain-Source breakdown voltage
Symbol
Test Conditions
Min
Typ.
Max
V (BR) DSS
ID = -1 mA, VGS = 0 V
-20
⎯
⎯
V (BR) DSX
ID = -1 mA, VGS = 8 V
-12
⎯
⎯
Unit
V
Drain cut-off current
IDSS
VDS = -20 V, VGS = 0 V
⎯
⎯
-10
μA
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0 V
⎯
⎯
±1
μA
Gate threshold voltage
Vth
VDS = -3 V, ID = -1 mA
-0.3
⎯
-1.0
V
Forward transfer admittance
|Yfs|
VDS = -3 V, ID = -1.0 A
(Note 3)
2.2
4.4
⎯
S
ID = -1.0 A, VGS = -4.5 V
Drain–source ON-resistance
RDS (ON)
Coss
Reverse transfer capacitance
83
107
107
144
⎯
170
306
⎯
390
⎯
⎯
67
⎯
⎯
(Note 3)
Ciss
Output capacitance
⎯
⎯
ID = -0.5 A, VGS = -1.8 V
Input capacitance
(Note 3)
ID = -0.75 A, VGS = -2.8 V (Note 3)
VDS = -10 V, VGS = -0 V, f = 1 MHz
Crss
⎯
55
Total Gate Charge
Qg
⎯
9.6
Qgs
⎯
6.6
⎯
Gate-Drain Charge
Qgd
⎯
3.0
⎯
17
⎯
pF
⎯
Gate-Source Charge
mΩ
Switching time
VDS = -10 V, IDS= -3.6 A
VGS = -4 V
Turn-on time
ton
VDD = -10 V, ID = -1.0 A
⎯
Turn-off time
toff
VGS = 0 to -2.5 V, RG = 4.7 Ω
⎯
19.5
⎯
ID = 3.6 A, VGS = 0 V
⎯
0.9
1.2
Drain-Source forward voltage
VDSF
(Note 3)
nC
ns
V
Note3: Pulse test
1
2008-10-22
