DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA828TD
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)
FEATURES
• Built-in low phase distortion transistor suited for OSC applications
fT = 9.0 GHz TYP., S21e2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Built-in 2 transistors (2 × 2SC5436)
• 6-pin lead-less minimold (M16, 1208 package)
BUILT-IN TRANSISTORS
Q1, Q2
3-pin thin-type ultra super minimold part No.
2SC5436
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
µPA828TD
50 pcs (Non reel)
• 8 mm wide embossed taping
µPA828TD-T3
10 kpcs/reel
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10402EJ02V0DS (2nd edition)
Date Published September 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 2003
