Si2333DS
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 5.3
0.042 at VGS = - 2.5 V
- 4.6
0.059 at VGS = - 1.8 V
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
ID (A)
0.032 at VGS = - 4.5 V
- 12
RDS(on) (Ω)
- 3.9
APPLICATIONS
• Load Switch
• PA Switch
TO-236
(SOT-23)
G
1
3
S
D
2
Top View
Si2333DS (E3)*
* Marking Code
Ordering Information: Si2333DS-T1-E3 (Lead (Pb)-free)
Si2333DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
- 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a, b
IS
TA = 25 °C
TA = 70 °C
PD
- 4.1
- 4.2
- 3.3
- 20
- 1.0
0.75
0.8
0.48
A
- 0.6
1.25
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 5.3
IDM
Pulsed Drain Current
Maximum Power Dissipationa, b
ID
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
75
100
120
166
40
Unit
50
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 72023
S09-0130-Rev. C, 02-Feb-09
www.vishay.com
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