POWEREX
MITSUBISHI SEMICONDUCTOR
M54522P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54522P and M54522FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
High breakdown voltage (BVCEO ≥ 40V)
High-current driving (Ic(max) = 400mA)
With clamping diodes
Driving available with PMOS IC output
Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION
INPUT
IN1→ 1
18 →O1
IN2→ 2
17 →O2
IN3→ 3
16 →O3
IN4→ 4
15 →O4
IN5→ 5
14 →O5
IN6→ 6
13 →O6
IN7→ 7
12 →O7
IN8→ 8
11 →O8
GND
10 →COM COMMON
OUTPUT
9
Package type 18P4G(P)
NC
1
20
NC
FUNCTION
The M54522P and M54522FP each have eight circuits consisting of NPN Darlington transistors. These ICs have resistance of 20kΩ between input transistor bases and input pins.
A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The output transistor emitters are all connected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54522FP is enclosed in a molded small flat package,
enabling space-saving design.
IN1→ 2
19 →O1
IN2→ 3
18 →O2
IN3→ 4
17 →O3
IN4→ 5
16 →O4
IN5→ 6
15 →O5
IN6→ 7
14 →O6
IN7→ 8
13 →O7
IN8→ 9
12 →O8
GND
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between microcomputer output and high-current or high-voltage systems
INPUT
11 →COM COMMON
OUTPUT
10
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
COM
OUTPUT
20K
INPUT
20K
2K
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
Aug. 1999
