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HL6320G-A
HL6319G/20G ODE2011-00 (M) Rev.0 Aug. 01, 2008 AlGaInP Laser Diodes Description The HL6319G/20G are 0.63 μm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Features • • • • • • Package Type • HL6319G/20G: G2 Visible light output: 635 nm Typ Single longitudinal mode Optical output power: 10 mW CW Low operating current: 95 mA Max Low operating voltage: 2.7 V Max TM mode oscillation Internal Circuit • HL6319G 1 Internal Circuit • HL6320G 1 3 PD LD 3 PD 2 LD 2 Absolute Maximum Ratings (TC = 25°C) Item Optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Symbol Ratings 10 2 30 –10 to +50 –40 to +85 PO VR(LD) VR(PD) Topr Tstg Unit mW V V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Threshold current Operating current Operating voltage Symbol Ith IOP VOP Min 20 — — Typ 50 70 — Max 75 95 2.7 Unit mA mA V Slope efficiency ηs 0.3 0.5 0.7 mW/mA Beam divergence parallel to the junction θ// 5 8 11 ° 6 (mW) / (I(8mW) – I(2mW)) PO = 10 mW Beam divergence perpendicular to the junction Astigmatism Lasing wavelength Monitor current θ⊥ 25 31 37 ° PO = 10 mW AS λp IS — 625 0.05 5 635 0.17 — 640 0.30 μm nm mA Rev.0 Aug. 01, 2008 page 1 of 4 Test Conditions — PO = 10 mW PO = 10 mW PO = 10 mW, NA = 0.55 PO = 10 mW PO = 10 mW, VR(PD) = 5 V
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