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MA2S111
This product complies with the RoHS Directive (EU 2002/95/EC). Switching Diodes MA2S111 Silicon epitaxial planar type For switching circuits M Di ain sc te on na tin nc ue e/ d Unit: mm ■ Features 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 0.80±0.05 1 1.60±0.05 (0.60) (0.80) 5˚ 0+0 –0.05 5˚ Symbol Rating Unit 80 V 80 V Forward current IF 100 mA Peak forward current IFM 225 mA Non-repetitive peak forward surge current * IFSM 500 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 (0.15) VR VRM 0.01±0.01 Reverse voltage Maximum peak reverse voltage 0.01±0.01 2 0.30±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1.20+0.05 –0.03 (0.60) ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. • Allowing high-density mounting • Short reverse recovery time trr • Small terminal capacitance Ct °C Note) *: t = 1 s 1: Anode 2: Cathode EIAJ: SC-79 SSMini2-F1 Package Marking Symbol: A ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions VR Ct ce /D Reverse recovery time * is Terminal capacitance Unit 1.20 V 100 nA 2.0 pF 3 ns VR = 0 V, f = 1 MHz trr co Reverse current Max VR = 75 V IF = 10 mA, VR = 6 V Irr = 0.1 IR , RL = 100 Ω nt in IR = 100 µA IR Reverse voltage Min IF = 100 mA Typ 0.95 VF Forward voltage 80 0.6 V Bias Application Unit (N-50BU) Input Pulse Pl ea M ai nt en an Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *: trr measurement circuit tp tr 10% A 90% VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: March 2004 Wave Form Analyzer (SAS-8130) Ri = 50 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 SKF00015BED Output Pulse t IF trr t Irr = 0.1 IR IF = 10 mA VR = 6 V RL = 100 Ω 1
PANASONIC
パナソニック株式会社
日本
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