MITSUBISHI SEMICONDUCTOR
M54580P/FP
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54580P and M54580FP are seven-circuit output-sourcing
Darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
PIN CONFIGURATION
INPUT
FEATURES
High breakdown voltage (BV CEO ≥ 50V)
High-current driving (Io(max) = –150mA)
Active L-level input
With input diodes
Wide operating temperature range (Ta = –20 to +75°C)
IN1→ 1
16 →O1
IN2→ 2
15 →O2
IN3→ 3
14 →O3
IN4→ 4
13 →O4 OUTPUT
IN5→ 5
12 →O5
IN6→ 6
11 →O6
IN7→ 7
10 →O7
GND
8
9
VS
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
APPLICATION
Drives of relays, printers and indication elements such as
LEDs, fluorescent display tubes and lamps, and interfaces
between MOS-bipolar logic systems and relays, solenoids,
or small motors
VS
30K
7K
INPUT
7K
OUTPUT
50K
FUNCTION
The M54580P and M54580FP each have seven circuits,
which are made of output current-sourcing Darlington transistors consisting of PNP and NPN transistors. Each PNP
transistor has a diode and resistance of 7kΩ between the
base and input pin. Its emitter and NPN transistor collectors
are connected to the VS pin (pin 9). Resistance of 50kΩ is
connected between each output pin and GND pin (pin 8).
Output current is 150mA maximum. Supply voltage VS is 50V
maximum.
The M54580FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
Parameter
Collector-emitter voltage
VS
VI
GND
The seven circuits share the VS and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Supply voltage
IO
Input voltage
Output current
Pd
Topr
Power dissipation
Operating temperature
Tstg
Storage temperature
Conditions
Current per circuit output, H
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
Unit
V
50
–0.5 ~ VS
Output, L
V
V
–150
mA
1.47(P)/1.00(FP)
–20 ~ +75
W
°C
–55 ~ +125
°C
Aug. 1999
