Power Transistors
2SB0950 (2SB950), 2SB0950A (2SB950A)
Silicon PNP epitaxial planar type darlington
Unit: mm
10.0±0.2
0.7±0.1
For power amplification and switching
Complementary to 2SD1276 and 2SD1276A
16.7±0.3
4.2±0.2
φ 3.1±0.1
Collector-base voltage
(Emitter open)
Symbol
2SB0950
Unit
−60
VCBO
VCEO
Emitter-base voltage (Collector open)
VEBO
V
2.54±0.3
−60
5.08±0.5
V
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
−80
IC
Peak collector current
ICP
Collector power
PC
Ta = 25°C
−5
1 2 3
V
−4
Collector current
A
−8
A
40
W
Internal Connection
2
Tj
Storage temperature
Tstg
C
B
150
Junction temperature
°C
−55 to +150
°C
■ Electrical Characteristics TC = 25°C ± 3°C
Symbol
Min
Typ
Max
Collector-base cutoff
current (Emitter open)
VCE = −3 V, IC = −3 A
−2.5
V
2SB0950
ICBO
VCB = −60 V, IE = 0
−200
µA
VCB = −80 V, IE = 0
−200
VCE = −30 V, IB = 0
−500
VCE = −40 V, IB = 0
−500
2SB0950A
2SB0950
V
−80
2SB0950A
ICEO
2SB0950A
an
Collector-emitter cutoff
IC = −30 mA, IB = 0
ce
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isc
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Base-emitter voltage
−60
Unit
VCEO
VBE
2SB0950
Collector-emitter voltage
(Base open)
current (Base open)
Conditions
E
ue
Parameter
0.5+0.2
–0.1
0.8±0.1
−80
2SB0950A
Collector-emitter voltage 2SB0950
(Base open)
2SB0950A
dissipation
Rating
1.3±0.2
1.4±0.1
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Parameter
14.0±0.5
■ Absolute Maximum Ratings TC = 25°C
Solder Dip
(4.0)
M
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• High forward current transfer ratio hFE
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
2.7±0.2
7.5±0.2
■ Features
4.2±0.2
5.5±0.2
IEBO
VEB = −5 V, IC = 0
Forward current transfer ratio
hFE1
VCE = −3 V, IC = − 0.5 A
1 000
VCE = −3 V, IC = −3 A
1 000
Ma
int
en
Emitter-base cutoff current (Collector open)
hFE2
*
VCE(sat)1
mA
10 000
IC = −3 A, IB = −12 mA
VCE(sat)2
Collector-emitter saturation voltage
−2
µA
−2
IC = −5 A, IB = −20 mA
−4
V
V
fT
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC = −3 A, IB1 = −12 mA, IB2 = 12 mA
0.3
µs
Storage time
tstg
VCC = −50 V
2
µs
0.5
µs
Transition frequency
Fall time
tf
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
hFE2
1 000 to 2 500
Q
P
2 000 to 5 000 4 000 to 10 000
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
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