DATA SHEET
MOS INTEGRATED CIRCUIT
µ PD431000A
1M-BIT CMOS STATIC RAM
128K-WORD BY 8-BIT
Description
The µPD431000A is a high speed, low power, and 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.
The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In
addition to this, A and B versions are low voltage operations.
The µPD431000A is packed in 32-pin PLASTIC DIP, 32-pin PLASTIC SOP and 32-pin PLASTIC TSOP (I) (8 × 13.4
mm) and (8 × 20 mm).
Features
• 131,072 words by 8 bits organization
• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)
• Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)
• Operating ambient temperature: TA = 0 to 70 °C
• Low VCC data retention: 2.0 V (MIN.)
• Output Enable input for easy application
• Two Chip Enable inputs: /CE1, CE2
Part number
Access time
Operating supply Operating ambient
ns (MAX.)
Supply current
At operating
At standby
At data retention
°C
mA (MAX.)
µA (MAX.)
µA (MAX.) Note1
4.5 to 5.5
0 to 70
70
100
15
20
70, 85
temperature
V
µPD431000A-xxL
voltage
3
µPD431000A-xxLL
µPD431000A-Axx
µPD431000A-Bxx
, 100
3.0 to 5.5
35
Note3
13
Note5
, 100, 120, 150
2.7 to 5.5
30
Note4
11
Note6
70
70
Note2
Note2
Notes 1. TA ≤ 40 °C
2. VCC = 4.5 to 5.5 V
3. 70 mA (VCC > 3.6 V)
4. 70 mA (VCC > 3.3 V)
5. 20 µA (VCC > 3.6 V)
6. 20 µA (VCC > 3.3 V)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M11657EJBV0DS00 (11th edition)
Date Published April 2002 NS CP (K)
Printed in Japan
The mark 5 shows major revised points.
©
1990, 1993, 1995
