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UN217
This product complies with the RoHS Directive (EU 2002/95/EC). Small Signal Transistor Arrays UNA0217 (UN217) Silicon PNP epitaxial planar type (2 elements) Silicon NPN epitaxial planar type (2 elements) Unit: mm M Di ain sc te on na tin nc ue e/ d For motor drives 6 ■ Absolute Maximum Ratings Ta = 25°C Parameter PNP −10 −7 V −1 A −2.5 A 12 V VCEO 10 7 IC Peak collector current ICP co * is /D ce Storage temperature 0.5±0.2 V nt in Collector current Junction temperature Marking Symbol: UN217 V VEBO 1: Emitter 2: Base 3: Collector 4: Base 5: Emitter 6: Emitter 7: Base 8: Collector 9: Base 10: Emitter SO10-G1 Package Internal Connection 5 Emitter-base voltage (Collector open) Total power dissipation 12° V ICP Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Overall VCEO VCBO Peak collector current NPN V IC Collector current Unit −12 VEBO Emitter-base voltage (Collector open) Rating VCBO Collector-emitter voltage (Base open) 8 9 10 0.9±0.1 6.5±0.3 12° Symbol Collector-base voltage (Emitter open) 7 45° 5.5±0.3 7.7±0.3 • Small and lightweight • Low power consumption (low VCE(sat) transistor used) • Low voltage drive • With 4 elements incorporated (0.8) 1.5±0.1 1.5+0.2 –0.1 ■ Features 0.2+0.1 –0.0 (0.5) 0.4±0.1 4 3 2 1 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. 5 1 A 3 2 1 6 7 8 9 10 A 2.5 4 PT 0.5 W Tj 150 °C Tstg −55 to +150 °C Pl ea M ai nt en an Note) *: When the dissipation on one device is TC = 25°C Note) The part number in the parenthesis shows conventional part number. Publication date: February 2007 SJK00045CED 1
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