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RTQ035P02TR
RTQ035P02 Transistor 2.5V Drive Pch MOS FET RTQ035P02 External dimensions (Unit : mm) Structure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 Features 1) Low On-resistance.(80mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) (5) 0.85 0.7 (4) 1.6 2.8 (6) 0~0.1 0.3~0.6 (2) (1) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Abbreviated symbol : TL Applications DC-DC converter Equivalent circuit Packaging specifications Package Taping (5) (4) TR Code Type (6) Basic ordering unit (pieces) 3000 ∗2 RTQ035P02 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Drain−source voltage VDSS −20 V Gate−source voltage VGSS ±12 V Continuous ID ±3.5 A Pulsed IDP ±17.5 A Continuous IS −1 A −4 A Parameter Drain current Source current (Body diode) Pulsed ISP ∗1 ∗1 ∗2 1.25 W Tch 150 °C Tstg −55 to +150 °C Total power dissipation PD Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Thermal resistance Parameter Channel to ambient Symbol Rth (ch-a) ∗ Limits 100 Unit °C / W ∗ Mounted on a ceramic board. Rev.A 1/4
ROHM
ローム株式会社
日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM（R:抵抗 Ohm:抵抗を示す単位）はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
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