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SP8M6TBTAPINGREEL
SP8M6 SP8M6FRA Transistors AEC-Q101 Qualified 4V Drive Nch+Pch MOSFET SP8M6 FRA zStructure Silicon N-channel / P-channel MOSFET zDimensions (Unit : mm) SOP8 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). zApplication Power switching, DC / DC converter. Each lead has same dimensions zPackaging specifications Package (8) Taping (7) (6) (5) (8) (7) (6) (5) TB Code Type zEquivalent circuit Basic ordering unit (pieces) 2500 SP8M6 FRA ∗2 ∗2 (1) (2) (3) (4) ∗1 (1) ∗1 (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain (8) Tr1 (Nch) Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. zAbsolute maximum ratings (Ta=25qC) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature VDSS VGSS ID IDP∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits Nchannel Pchannel −30 30 ±20 ±20 ±5.0 ±3.5 ±20 ±14 1.6 −1.6 20 −14 2 150 −55 to +150 Unit V V A A A A W °C °C ∗1 Pw≤10μs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD. zThermal resistance Parameter Channel to ambient Symbol Rth (ch-a) ∗ Limits 62.5 Unit °C / W ∗MOUNTED ON A CERAMIC BOARD. Rev.C 1/5
ROHM
ローム株式会社
日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM(R:抵抗 Ohm:抵抗を示す単位)はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
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