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RTQ045N03
RTQ045N03 Transistors Switching (30V, 4.5A) RTQ045N03 External dimensions (Unit : mm) TSMT6 (3) 2.8±0.2 Equivalent circuit Absolute maximum ratings (Ta=25°C) Continuous Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature (2) 0.4 +0.1 0.16 +0.1 −0.05 −0.06 (1) Drain 1pin mark (2) Drain (3) Gate Each lead has same dimensions (4) Source Abbreviated symbol : QM (5) Drain (6) Drain Structure Silicon N-channel MOS FET Drain current (4) 0~0.1 (1) Parameter Drain-source voltage Gate-source voltage (5) 0.85±0.1 0.7±0.1 1.6 +0.2 −0.1 (6) Application Power switching, DC / DC converter. 1.0MAX. 2.9±0.1 1.9±0.2 0.95 0.95 0.3~0.6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT6) . Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg ∗ ∗ Limits 30 12 ±4.5 ±18 1.0 4.0 1.25 150 −55~150 Unit V V A A A A W °C °C (6) (5) (5) (4) (2) (3) ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗1 Pw≤10µs, Duty cycle≤1% (6) (1) (4) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Thermal resistance (Ta=25°C) Parameter Channel to ambient Symbol Rth (ch-A) Limits 100 Unit °C / W 1/3
ROHM
ローム株式会社
日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM（R:抵抗 Ohm:抵抗を示す単位）はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
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