JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO – 92L
2SA683
TRANSISTOR (PNP)
1. EMITTER
2. COLLECTOR
FEATURES
Complementary Pair with 2SC1383
Allowing Supply with the Radial Taping.
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-25
V
Emitter-Base Voltage
-5
V
IC
Collector Current
-1
A
PC
Collector Power Dissipation
0.75
W
Thermal Resistance From Junction To Ambient
167
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
VEBO
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-10µA,IE=0
-30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-2mA,IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-20V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
hFE(1)*
VCE=-10V, IC=-0.5A
85
hFE(2)
DC current gain
VCE=-5V, IC=-1A
50
340
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA,IB=-50mA
-0.4
V
Base-emitter saturation voltage
VBE (sat)
IC=-500mA,IB=-50mA
-1.2
V
30
pF
Cob
Collector output capacitance
fT
Transition frequency
VCB=-10V,IE=0, f=1MHz
VCE=-10V,IC=-50mA, f=200MHz
200
MHz
*Pulse test
CLASSIFICATION OF hFE(1)
RANK
Q
R
S
RANGE
85-170
120-240
170-340
A,Dec,2010
