Power Transistor (160V , 1.5A)
2SD1918 / 2SD1857A
Features
1) High breakdown voltage.(BVCEO=160V)
2) Low collector output capacitance.
(Typ. 20pF at VCB=10V)
3) High transition frequency.(fT=80MHZ)
4) Complements the 2SB1275.
Dimensions (Unit : mm)
5.1
6.5
0.65
0.5
2.3
0.8Min.
C0.5
1.5
2.3
0.9
2.3
(3) (2) (1)
1.5
5.5
0.9
1.0
0.5
Absolute maximum ratings (Ta = 25C)
0.75
2SD1918
2.5
9.5
Symbol
Limits
Unit
VCBO
VCEO
160
160
VEBO
5
1.5
3
V
V
V
A(DC)
A(Pulse)
∗1
1
W
∗2
PC
1
W
10
W(Tc=25°C)
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 ∼+150
°C
2SD1918
2SD1857A
6.8
2.5
4.4
2SD1857A
∗ 1 Pw=200msec duty=1/2
∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
0.65Max.
14.5
Collector
power
dissipation
IC
0.9
Collector current
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : CPT3
EIAJ : SC-63
1.0
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
0.5
(1) (2) (3)
2.54 2.54
Packaging specifications and hFE
Type
2SD1918
2SD1857A
CPT3
QR
ATV
PQ
−
TV2
2500
Package
hFE
Marking
Code
Basic ordering unit (pieces)
−
TL
2500
1.05
0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
* Denotes hFE
Electrical characteristics (Ta = 25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
160
−
−
V
IC = 50μA
Collector-emitter breakdown voltage
BVCEO
160
−
−
V
IC = 1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE = 50μA
Collector cutoff current
ICBO
−
−
1
μA
VCB = 120V
Emitter cutoff current
IEBO
−
−
1
μA
VEB = 4V
Collector-emitter saturation voltage
VCE(sat)
−
−
2
V
IC/IB = 1A/0.1A
∗
Base-emitter saturation voltage
VBE(sat)
−
−
1.5
V
IC/IB = 1A/0.1A
∗
120
−
390
−
DC current
2SD1918
transfer ratio
2SD1857A
hFE
82
−
270
−
Transition frequency
fT
−
80
−
MHz
Output capacitance
Cob
−
20
−
pF
Conditions
VCE/IC = 5V/0.1A
VCE = 5V , IE = −0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
∗ Measured using pulse current.
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2010.09 - Rev.C