2SJ344
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ344
High Speed Switching Applications
Analog Switch Applications
•
Low threshold voltage: Vth = −0.8 to −2.5 V
•
High speed
•
Enhancement-mode
•
Small package
•
Unit: mm
Complementary to 2SK1827
Marking
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
JEDEC
Symbol
Rating
Unit
Drain-source voltage
VDS
−50
V
Gate-source voltage
VGSS
−7
V
ID
−50
mA
Drain power dissipation
PD
100
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
―
°C
DC drain current
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
IGSS
Test Condition
VGS = −7 V, VDS = 0
V (BR) DSS
ID = −100 μA, VGS = 0
IDSS
Drain-source breakdown voltage
VDS = −50 V, VGS = 0
Min
Typ.
Max
Unit
⎯
⎯
−1
μA
−50
⎯
⎯
V
μA
⎯
⎯
−1
Vth
VDS = −5 V, ID = −0.1 mA
−0.8
⎯
−2.5
V
Forward transfer admittance
⎪Yfs⎪
VDS = −5 V, ID = −10 mA
15
⎯
⎯
mS
Drain-source ON resistance
RDS (ON)
Drain cut-off current
Gate threshould voltage
ID = −10 mA, VGS = −4 V
⎯
20
50
Ω
Ciss
VDS = −5 V, VGS = 0, f = 1 MHz
⎯
10.5
⎯
pF
Reverse transfer capacitance
Crss
VDS = −5 V, VGS = 0, f = 1 MHz
⎯
1.9
⎯
pF
Output capacitance
Coss
VDS = −5 V, VGS = 0, f = 1 MHz
⎯
7.2
⎯
pF
VDD = −5 V, ID = −10 mA,
VGS = 0~−4 V
⎯
0.15
⎯
⎯
0.13
⎯
Input capacitance
Switching time
Turn-on time
ton
Turn-off time
toff
1
μs
2007-11-01